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| (R) STPS20L60CT/CG/CR POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) 2 x 10 A 60 V 150 C 0.56 V A2 K K FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s A2 A2 A1 K A1 TO-220AB STPS20L60CT D2PAK STPS20L60CG DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, I2PAK and D2PAK, this device is intended for use in high frequency inverters. A2 K A1 I2PAK STPS20L60CR ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 140C = 0.5 Per diode Per device Value 60 30 10 20 220 1 5800 - 65 to + 175 150 10000 Unit V A A A A W C C V/s tp = 10 ms Sinusoidal tp = 2 s square F = 1kHz tp = 1s Tj = 25C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/6 July 2003 - Ed: 3C STPS20L60CT/CG/CR THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Junction to case Parameter TO-220AB / I PAK / D PAK TO-220AB / I2PAK / D2PAK 2 2 Value Per diode Total Coupling 1.6 0.85 0.1 Unit C/W C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. Max. 350 Unit A mA V VR = VRRM 65 IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.62 0.48 95 0.6 0.56 0.74 0.7 To evaluate the conduction losses use the following equation : P = 0.42x IF(AV) + 0.014 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) = 0.1 = 0.2 Fig. 2: Average current versus temperature (=0.5) (per diode). IF(av)(A) 12 ambient 8 7 6 5 4 3 2 1 0 = 0.5 =1 Rth(j-a)=Rth(j-c) = 0.05 10 8 6 T Rth(j-a)=15C/W 4 2 =tp/T T IF(av) (A) 0 1 2 3 4 5 6 7 8 9 =tp/T tp tp Tamb(C) 50 75 100 125 150 10 11 12 0 0 25 2/6 STPS20L60CT/CG/CR Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3 Fig. 6: Relative variation of thermal transient impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 Tc=25C = 0.5 0.4 Tc=75C = 0.2 T 0.2 t = 0.1 Tc=100C =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-3 1E-2 =tp/T tp 0.0 1E-4 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(mA) 5E+2 1E+2 1E+1 1E+0 1E-1 1E-2 1E-3 Tc=150C Tc=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 2.0 F=1MHz Tj=25C 1.0 Tc=100C Tc=75C 0.5 Tc=50C Tc=25C 0.2 VR(V) 0 5 10 15 20 25 30 35 40 45 50 55 60 VR(V) 0.1 1 10 100 3/6 STPS20L60CT Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=150C (typical values) Tj=25C 10.0 Tj=125C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 c c2 D D L1 b2 L b1 b e A1 e E L L1 c L2 4/6 STPS20L60CT/CG/CR PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STPS20L60CT/CG/CR PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. s s s COOLING METHOD: C RECOMMENDED TORQUE VALUE: 0.55 M.N MAXIMUM TORQUE VALUE: 0.70 M.N Ordering type STPS20L60CT STPS20L60CT STPS20L60CG STPS20L60CG-TR STPS20L60CR Marking STPS20L60CT STPS20L60CT STPS20L60CG STPS20L60CG STPS20L60CR Package TO-220AB TO-220AB D PAK D PAK I2PAK 2 2 Weight 2.2g 2.2g 1.48 g 1.48 g 1.49 g Base qty 50 1000 50 1000 50 Delivery mode Tube Bulk Tube Tape & reel Tube s EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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